期刊
NATURE ELECTRONICS
卷 4, 期 9, 页码 653-663出版社
NATURE PORTFOLIO
DOI: 10.1038/s41928-021-00633-6
关键词
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资金
- National Natural Science Foundation of China for Excellent Young Scholars [61622404]
- Chang Jiang (Cheung Kong) Scholars Program of Ministry of Education of China [Q2017081]
- National Natural Science Foundation of China [62074098]
- Science and Technology Innovation Action Program from the Science and Technology Commission of Shanghai Municipality [15520720200]
- United States Department of Energy through the Stanford Institute for Materials and Energy Sciences [DE-AC02-76SF00515]
- National Key R&D Program of China [2018YFA0208404]
- Innovation Program of Shanghai Municipal Education Commission
- NSF [1809770, 1904580]
- US Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
- Beijing Outstanding Young Scientist Program [BJJWZYJH01201914430039]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1809770] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1904580] Funding Source: National Science Foundation
Sub-10-nm-wide semiconducting graphene nanoribbons with atomically smooth closed edges can be produced by squashing carbon nanotubes using a high-pressure and thermal treatment. The resulting nanoribbons exhibit high mobilities and can be used to fabricate field-effect transistors with high performance.
Graphene nanoribbons are of potential use in the development of electronic and optoelectronic devices. However, the preparation of narrow and long nanoribbons with smooth edges, sizeable bandgaps and high mobilities is challenging. Here we show that sub-10-nm-wide semiconducting graphene nanoribbons with atomically smooth closed edges can be produced by squashing carbon nanotubes using a high-pressure and thermal treatment. With this approach, nanoribbons as narrow as 1.4 nm can be created, and up to 54% of single- and double-walled nanotubes in a sample can be converted into edge-closed nanoribbons. We also fabricate edge-opened nanoribbons using nitric acid as the oxidant to selectively etch the edges of the squashed nanotubes under high pressure. A field-effect transistor fabricated using a 2.8-nm-wide edge-closed nanoribbon exhibits an on/off current ratio of more than 10(4), from which a bandgap of around 494 meV is estimated. The device also exhibits a field-effect mobility of 2,443 cm(2) V-1 s(-1) and an on-state channel conductivity of 7.42 mS. Narrow, long graphene nanoribbons with atomically smooth and defect-free edges can be produced by squashing carbon nanotubes, and can be used to fabricate a sub-3-nm-wide channel field-effect transistor with a mobility of 2,443 cm(2) V-1 s(-1).
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