Review on GaAsSb nanowire potentials for future 1D heterostructures: Properties and applications

GaAsSb nanowires (NWs) are classified as important ternary (antimony) Sb based III-V NWs with various roles and potential to form one-dimensional heterojunction structures. Furthermore, their unique properties, such as having p-type carrier nature in intrinsically grown GaAsSb, high optical absorption coefficient in the infrared, widely tunable bandgap and high carrier mobility, make them a promising candidate for fabricating novel electronic and optoelectronic devices. This review provides a comprehensive overview of recent developments and technical details on the properties of GaAsSb NW-based heterostructures as well as their applications in electronic and optoelectronic devices.

Automated summary

GaAsSb nanowires are important ternary III-V nanowires with the potential to form one-dimensional heterojunction structures, making them promising candidates for fabricating novel electronic and optoelectronic devices. Their unique properties and high carrier mobility further contribute to their applications in electronic and optoelectronic devices.