High-speed 2D and 3D mid-IR imaging with an InGaAs camera

Recent work on mid-infrared (MIR) detection through the process of non-degenerate two-photon absorption (NTA) in semiconducting materials has shown that wide-field MIR imaging can be achieved with standard Si cameras. While this approach enables MIR imaging at high pixel densities, the low nonlinear absorption coefficient of Si prevents fast NTA-based imaging at lower illumination doses. Here, we overcome this limitation by using InGaAs as the photosensor. Taking advantage of the much higher nonlinear absorption coefficient of this direct bandgap semiconductor, we demonstrate high-speed MIR imaging up to 500 fps with under 1 ms exposure per frame, enabling 2D or 3D mapping without pre- or post-processing of the image.(c) 2021 Author(s).

Automated summary

Recent research has shown that wide-field mid-infrared (MIR) imaging can be achieved using standard Si cameras through non-degenerate two-photon absorption (NTA) in semiconducting materials. By utilizing InGaAs as the photosensor, the limitation of low nonlinear absorption coefficient of Si is overcome, enabling high-speed MIR imaging up to 500 fps with under 1 ms exposure per frame, allowing for 2D or 3D mapping without the need for pre- or post-processing of the image.