Methods to achieve ultra-high quality factor silicon nitride resonators

On-chip resonators are promising candidates for applications in a wide range of integrated photonic fields, such as communications, spectroscopy, biosensing, and optical filters, due to their compact size, wavelength selectivity, tunability, and flexible structure. The high quality (Q) factor is a main positive attribute of on-chip resonators that makes it possible for them to provide high sensitivity, narrow bandpass, and low power consumption. In this Tutorial, we discuss methods to achieve ultra-high Q factor on-chip resonators on a silicon nitride (Si3N4) platform. We outline the microfabrication processes, including detailed descriptions and recipes for steps such as deposition, lithography, etch, cladding, and etch facet, and then describe the measurement of the Q factor and methods to improve it. We also discuss how to extract the basic loss limit and determine the contribution of each loss source in the waveguide and resonator. We present a modified model for calculating scattering losses, which successfully relates the measured roughness of the waveguide interface to the overall performance of the device. We conclude with a summary of work done to date with low pressure chemical vapor deposition Si3N4 resonator devices, confinement, cross-sectional dimensions, bend radius, Q factor, and propagation loss. (c) 2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

Automated summary

This article discusses methods to achieve ultra-high quality factor on-chip resonators on a silicon nitride platform, including microfabrication processes, quality factor measurement, and improvement methods. It also explores the extraction of basic loss limits and a calculation model for scattering losses in waveguides and resonators.