4.3 Article

Growth, domain structure, and atomic adsorption sites of hBN on the Ni(111) surface

期刊

PHYSICAL REVIEW MATERIALS
卷 5, 期 9, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.5.094001

关键词

-

资金

  1. Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) [SFB 1083]
  2. DFG [TRR 173 - 268565370]
  3. Dynamics and Topology Center - State of Rhineland Palatinate

向作者/读者索取更多资源

The atomically thin insulator hexagonal boron nitride (hBN) is crucial in decoupling functional materials from reactive surfaces, with its structural properties on Ni(111) surface being quantified in this study. It is found that hBN predominantly grows in two epitaxial domains rotated by 60 degrees, showing identical adsorption heights and similar chemical interaction strength with the Ni(111) surface. The different azimuthal orientations of these domains originate from different adsorption sites of N and B, highlighting the importance of atomic adsorption configuration in mesoscopic domain structures of two-dimensional materials on highly reactive surfaces.
One of the most important functionalities of the atomically thin insulator hexagonal boron nitride (hBN) is its ability to chemically and electronically decouple functional materials from highly reactive surfaces. It is therefore of utmost importance to uncover its structural properties on surfaces on an atomic and mesoscopic length scale. In this paper, we quantify the relative coverages of structurally different domains of a hBN layer on the Ni(111) surface using low-energy electron microscopy and the normal incidence x-ray standing wave technique. We find that hBN nucleates on defect sites of the Ni(111) surface and predominantly grows in two epitaxial domains that are rotated by 60. with respect to each other. The two domains reveal identical adsorption heights, indicating a similar chemical interaction strength with the Ni(111) surface. The different azimuthal orientations of these domains originate from different adsorption sites of N and B. We demonstrate that the majority (approximate to 70%) of hBN domains exhibit a (N, B) = (top, fcc) adsorption site configuration while the minority (approximate to 30%) show a ( N, B) = (top, hcp) configuration. Our study hence underlines the crucial role of the atomic adsorption configuration in the mesoscopic domain structures of in situ fabricated two-dimensional materials on highly reactive surfaces.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.3
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据