期刊
ELECTRONICS
卷 10, 期 13, 页码 -出版社
MDPI
DOI: 10.3390/electronics10131551
关键词
Silicon Photo-Multipliers; SiPM; equivalent circuit model; electrical model; statistical model; simulation; Verilog-a
资金
- Universita degli Studi di Catania through the Project Programma Ricerca di Ateneo UNICT
A new silicon photomultiplier model is proposed in this paper, utilizing the Verilog-a behavioral language for transistor-level circuit simulations. The model includes traditional electrical and statistical models to describe the device noise, along with a procedure for parameter extraction validated through comparison of simulations to experimental results.
Silicon Photomultipliers (SiPMs) are photo-electronic devices able to detect single photons and permit the measurement of weak optical signals. Single-photon detection is accomplished through high-performance read-out front-end electronics whose design needs accurate modeling of the photomultiplier device. In the past, a useful model was developed, but it is limited to the device electrical characteristic and its parameter extraction procedure requires several measurement steps. A new silicon photomultiplier model is proposed in this paper. It exploits the Verilog-a behavioral language and is appropriate to transistor-level circuit simulations. The photon detection of a single cell is modeled using the traditional electrical model. A statistical model is included to describe the silicon photomultiplier noise caused by dark-count or after-pulsing effects. The paper also includes a procedure for the extraction of the model parameters through measurements. The Verilog-a model and the extraction procedure are validated by comparing simulations to experimental results.
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