Improved Negative Bias Stress Stability of Sol-Gel-Processed Li-Doped SnO2 Thin-Film Transistors

In this study, sol-gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm(2)/Vs saturation regime and I-on/I-off value of 1 x 10(8) and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

Automated summary

By adding 0.5 wt% Li dopant, the formation of oxygen vacancies in SnO2 TFTs was successfully suppressed, leading to improved negative bias stability in the fabricated devices.