4.4 Article

Evidence of Critical Tunnelling Width in Ensuring Spin Polarized Asymmetric Negative Differential Resistance Feature in Two-Dimensional g-C4N3-graphene-g-C4N3

期刊

CHEMISTRYSELECT
卷 6, 期 27, 页码 6916-6924

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/slct.202101583

关键词

Graphene sheet; tunnel barrier; spintronics; spin filter; negative differential resistance

资金

  1. All India Council of Technical Education (AICTE), Govt. of India [8-18/RIFD/RPS/POLICY-t/2016-17]
  2. DST-FIST project [SR/FST/COLLEGE-/2017/127]
  3. SERB (Science and Engineering Research Board) [TAR/2018]

向作者/读者索取更多资源

This study reveals the existence of a critical tunnelling width in graphitic tunnelling nanostructures, beyond which they exhibit asymmetric spin polarized negative differential resistance feature. The system switches from symmetric to asymmetric negative differential resistance feature at this critical tunnelling width.
We report herein existence of a critical tunnelling width beyond which graphitic tunnelling nanostructures exhibit asymmetric spin polarized negative differential resistance feature. Our theoretical foray quite clearly establishes that even with a simple two-dimensional tunnelling nanostructure created by an assembly of ferromagnetic graphitic carbon nitride (g-C4N3) electrodes separated by insulating graphene sheet of variable lengths, there exists a critical tunnelling width at which the system switches from symmetric to asymmetric negative differential resistance feature. Presence of robust spin filer efficiency (100 %) over a wide range of bias variation (-1.0 to +1.0 V) added with negative differential resistance action makes the device with shorter tunnelling width of 22.36 angstrom and 31. 96 angstrom potentially useful as multifunctional spintronic device. However, at the critical tunnelling width of 36.69 angstrom and beyond the forward bias negative differential resistance features completely switches off and same is observed only in reverse bias. This switching action certainly opens up the prospect of logic gates operation in quantum circuits. Results obtained has been explained through transmission spectra, transmission pathways and molecular projected self-consistent Hamiltonian states analysis. Emergence of asymmetric I-V curve beyond critical tunnelling width has been explained by examining differences in spin injection coefficients.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据