4.7 Article

Enhanced UV photodetectivity in solution driven ZnO nanosheets via piezo-phototronic effect

期刊

出版社

ELSEVIER
DOI: 10.1016/j.jmrt.2021.04.080

关键词

ZnO nanosheets; Cathodoluminescence; Photodetector; Piezo-phototronic effects

资金

  1. Basic Science Research Pro-gram through the National Research Foundation of Korea (NRF) - Ministry of Education [2016R1A6A1A03012877, 2016R1D1A1B03935948, 2019R1I1A1A 01063238, 2018R1D1A1B07051461, 2018R1D1A1B07051474]
  2. National Research Foundation of Korea [2016R1D1A1B03935948] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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This study reports the fabrication of a thin two-dimensional ZnO nanosheets flexible piezo-phototronic UV photodetector and discusses its photoresponse characteristics under UV illumination as well as the possibility of modulating photocurrent and responsivity through piezophototronic effect.
Here in, we report the fabrication of thin two dimensional (2D) ZnO nanosheets (NSs) flexible piezo-phototronic ultraviolet (UV) photodetector (PD). The morphological and optical properties of the as-synthesized ZnO NSs is characterized in detail. The flexible Ag-ZnO NSs-Ag lateral PDs are fabricated on the polyethylene terephthalate (PET) substrate. A striking photoresponse is observed for 2D-ZnO under UV illumination. Furthermore, by introducing a strain (in the form of bending) the photocurrent and responsivity of this PD can be modulated via piezophototronic effect, emerging from the ZnO nanosheets. The photocurrent enhancement under bending could be attributed to the piezo polarization charges produced at ZnO/Ag interface due to strain. This piezo polarization charges result in the modulation of Schottky barrier (SB) height at the semiconductor/metal interface and induce improved photogenerated charge carriers and reduced recombination probability to result enhanced performances from the ZnO NSs photodetector. The physical mechanism involved in the enhancement of photo current via piezo-phototronic is proposed to explain change in SB height at semiconductor/ metal interface using the band diagrams. This results demonstrates an efficient prototype of the piezo-phototronic PD based on thin ZnO NSs, which provides an effective pathway to enhance the performance of optoelectronic devices. (c) 2021 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).

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