3D integration and measurement of a semiconductor double quantum dot with a high-impedance TiN resonator

One major challenge to scaling quantum dot qubits is the dense wiring requirements, making it difficult to envision fabricating large 2D arrays of nearest-neighbor-coupled qubits necessary for error correction. We describe a method to ameliorate this issue by spacing out the qubits using superconducting resonators facilitated by 3D integration. To prove the viability of this approach, we use integration to couple an off-chip high-impedance TiN resonator to a double quantum dot in a Si/SiGe heterostructure. Using the resonator as a dispersive gate sensor, we tune the device down to the single electron regime with an SNR = 5.36. Characterizing the individual systems shows 3D integration can be done while maintaining low-charge noise for the quantum dots and high-quality factors for the superconducting resonator (single photon Q(L) = 2.14 x 10(4) with Q(i) approximate to 3 x 10(5)), necessary for readout and high-fidelity two-qubit gates.

Automated summary

The study presents a method to address the dense wiring requirements for scaling quantum dot qubits by using superconducting resonators and 3D integration. Successful integration of an off-chip high-impedance TiN resonator with a double quantum dot demonstrates the feasibility of this approach.