相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Direct measurement of the density and energy level of compensating acceptors and their impact on the conductivity of n-type Ga2O3 films
Md Minhazul Islam et al.
JOURNAL OF APPLIED PHYSICS (2020)
Chemical manipulation of hydrogen induced high p-type and n-type conductivity in Ga2O3
Md Minhazul Islam et al.
SCIENTIFIC REPORTS (2020)
Ultra-wide-bandgap (ScGa)2O3 alloy thin films and related sensitive and fast responding solar-blind photodetectors
Qile Wang et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2020)
Localized UV emitters on the surface of ß-Ga2O3
Jesse Huso et al.
SCIENTIFIC REPORTS (2020)
Study of trap levels in β-Ga2O3 by thermoluminescence spectroscopy
Md Minhazul Islam et al.
JOURNAL OF APPLIED PHYSICS (2019)
Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3
M. E. Ingebrigtsen et al.
APL MATERIALS (2019)
Review of gallium-oxide-based solar-blind ultraviolet photodetectors
Xuanhu Chen et al.
PHOTONICS RESEARCH (2019)
Defects and solarization in YAG transparent ceramics
Le Zhang et al.
PHOTONICS RESEARCH (2019)
Influence of growth temperature on the characteristics of β-Ga2O3 epitaxial films and related solar-blind photodetectors
Qile Wang et al.
APPLIED SURFACE SCIENCE (2019)
A review of the most recent progresses of state-of-art gallium oxide power devices
Hong Zhou et al.
JOURNAL OF SEMICONDUCTORS (2019)
Tuning the Phase and Microstructural Properties of TiO2 Films Through Pulsed Laser Deposition and Exploring Their Role as Buffer Layers for Conductive Films
S. Agarwal et al.
JOURNAL OF ELECTRONIC MATERIALS (2018)
Recent progress in the growth of β-Ga2O3 for power electronics applications
Michele Baldini et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018)
Ab initio molecular dynamics of atomic-scale surface reactions: insights into metal organic chemical vapor deposition of AlN on graphene
D. G. Sangiovanni et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2018)
Si- and Sn-Doped Homoepitaxial β-Ga2O3 Layers Grown by MOVPE on (010)-Oriented Substrates
Michele Baldini et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
High-Performance Depletion/Enhancement-Mode β-Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm
Hong Zhou et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Fast growth rate of epitaxial β-Ga2O3 by close coupled showerhead MOCVD
Fikadu Alema et al.
JOURNAL OF CRYSTAL GROWTH (2017)
Effect of post-deposition annealing on low temperature metalorganic chemical vapor deposited gallium oxide related materials
Yuki Takiguchi et al.
JOURNAL OF CRYSTAL GROWTH (2017)
Physical and optical properties of Ce: YAG nanophosphors and transparent ceramics and observation of novel luminescence phenomenon
S. Agarwal et al.
OPTICAL MATERIALS EXPRESS (2017)
P-type β-gallium oxide: A new perspective for power and optoelectronic devices
Ekaterine Chikoidze et al.
MATERIALS TODAY PHYSICS (2017)
Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy
Michele Baldini et al.
JOURNAL OF MATERIALS SCIENCE (2016)
High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
Akito Kuramata et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Synthesis and characterization of Ce:YAG nanophosphors and ceramics
F. A. Selim et al.
OPTICAL MATERIALS EXPRESS (2016)
Communication-A (001) beta-Ga2O3 MOSFET with+2.9 V Threshold Voltage and HfO2 Gate Dielectric
Marko J. Tadjer et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2016)
Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD
Xuejian Du et al.
JOURNAL OF MATERIALS SCIENCE (2015)
Dopant species with Al-Si and N-Si bonding in the MOCVD of AlN implementing trimethylaluminum, ammonia and silane
R. B. dos Santos et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2015)
Large-Area MOCVD Growth of Ga2O3 in a Rotating Disc Reactor
Nick M. Sbrockey et al.
JOURNAL OF ELECTRONIC MATERIALS (2015)
Donor characterization in ZnO by thermally stimulated luminescence
Jianfeng Ji et al.
APPLIED PHYSICS LETTERS (2014)
Hydrogen in insulating oxide Y3Al5O12 strongly narrows the band gap
D. Winarski et al.
APPLIED PHYSICS LETTERS (2014)
High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
Wan Sik Hwang et al.
APPLIED PHYSICS LETTERS (2014)
On the bulk β-Ga2O3 single crystals grown by the Czochralski method
Zbigniew Galazka et al.
JOURNAL OF CRYSTAL GROWTH (2014)
Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE
D. Gogova et al.
JOURNAL OF CRYSTAL GROWTH (2014)
Carbon as a Shallow Donor in Transparent Conducting Oxides
J. L. Lyons et al.
PHYSICAL REVIEW APPLIED (2014)
Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
Kohei Sasaki et al.
APPLIED PHYSICS EXPRESS (2012)
Study of exciton dynamics in garnets by low temperature thermo-luminescence
D. T. Mackay et al.
JOURNAL OF APPLIED PHYSICS (2012)
Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique
Yu Lv et al.
VACUUM (2012)
Radio-luminescence and absence of trapping defects in Nd-doped YAG single crystals
S. M. Reda et al.
RESULTS IN PHYSICS (2012)
Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method
K. Irmscher et al.
JOURNAL OF APPLIED PHYSICS (2011)
Strong visible and near infrared luminescence in undoped YAG single crystals
C. R. Varney et al.
AIP ADVANCES (2011)
Czochralski growth and characterization of β-Ga2O3 single crystals
Z. Galazka et al.
CRYSTAL RESEARCH AND TECHNOLOGY (2010)
Growth and spectral characterization of β-Ga2O3 single crystals
Jungang Zhang et al.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS (2006)
Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor
K Matsuzaki et al.
THIN SOLID FILMS (2006)