MOCVD growth and characterization of conductive homoepitaxial Si-doped Ga2O3

Epitaxial Ga2O3 films were grown by Metal Organic Chemical Vapor Deposition (MOCVD) on native substrates at growth rate of 1 mu m/hour. The electron conductivity was introduced in the films through Si doping during deposition and the growth and doping parameters were optimized to control the electrical transport properties. The films were characterized in terms of structure, surface morphology, electrical transport properties, dopant concentrations and trapping defects. It was found that electron densities are not solely dependent on dopant concentrations and the use of metal organic precursor seems to induce additional donors of carbon. The work shows that the electron density and conductivity of MOCVD Ga2O3 films are mainly governed by the interplay between dopant concentration, C concentration and the presence of trapping defects in the films, which is most likely applicable for other oxide films grown by MOCVD. Conductive films of Ga2O3 with resistivity in the order of 0.07 Omega.cm were successfully grown. The electron density in most of these films was in the range of 1019 cm(-3) but the mobility was limited to 1.5 cm(2)/V.s. Higher mobility of 30 cm(2)/V.s was obtained in some films at the expense of carrier concentration by reducing Si doping level resulting in resistivity in the order of 0.3 Omega.cm. This range of conductivity and mobility is relevant for field-effect transistors (FET) and the applications of Ga2O3 as transparent FET in Deep Ultra-Violet (DUV) technology.

Automated summary

Epitaxial Ga2O3 films were grown through MOCVD with optimized growth and doping parameters, showing that electron density and conductivity are influenced by the interplay between dopant concentration, C concentration, and trapping defects in the films. Conductive films with desirable resistivity and mobility for FET and transparent FET applications in DUV technology were successfully obtained.