4.7 Article

Methodology of Low Inductance Busbar Design for Three-Level Converters

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JESTPE.2020.2999403

关键词

Switches; Inductance; Layout; Capacitors; Bars; Topology; Aircraft propulsion; Busbar; overvoltage; silicon carbide (SiC) MOSFET; switching loop; three-level (3L) converter

资金

  1. Boeing Company
  2. NASA
  3. Engineering Research Center Program of the National Science Foundation (NSF)
  4. U.S. Department of Energy under NSF [EEC-1041877]
  5. CURENT Industry Partnership Program

向作者/读者索取更多资源

This article presents a methodology of busbar layout design for 3L converters based on the magnetic cancellation effect, with a detailed design example provided for a high-power 3L-ANPC converter. The loop inductance of the busbar is verified, showing significantly lower values than other references for NPC-type converters.
Three-level (3L) converters are more susceptible to parasitics compared with two-level converters because of their complicated structure with multiple switching loops. In this article, the methodology of busbar layout design for 3L converters based on the magnetic cancellation effect is presented. The methodology can fit for 3L converters with symmetric and asymmetric configurations. A detailed design example is provided for a high-power 3L-active neutral point clamped (ANPC) converter, which includes the module selection, busbar layout, and dc-link capacitor placement. The loop inductance of the busbar is verified with simulation, impedance measurements, and converter experiments. The results match with each other, and the inductances of short and long loops are 6.5 and 17.5 nH, respectively, which are significantly lower than the busbars of NPC-type converters in other references.

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