4.6 Article

Tunable Bandgaps in Phononic Crystal Microbeams Based on Microstructure, Piezo and Temperature Effects

期刊

CRYSTALS
卷 11, 期 9, 页码 -

出版社

MDPI
DOI: 10.3390/cryst11091029

关键词

phononic crystal; couple stress theory; magneto-electro-elastic; piezoelectricity; piezomagnetism; temperature change; size effect

资金

  1. National Key R&D Program of China [2018YFD1100401]
  2. National Natural Science Foundation of China [12002086, 11872149, 11772091]

向作者/读者索取更多资源

A new model of non-classical phononic crystal microbeam incorporating microstructure, piezomagnetism, piezoelectricity and temperature effects is provided for elastic wave bandgap generation. The study reveals that the bandgap frequency is raised with the presence of piezoelectric and microstructure effects, and geometric parameters play an important role. Adjusting external electric and magnetic potentials at micron scale can lead to large bandgaps, while lower bandgap frequency can be achieved through temperature rise at all length scales.
A new model of non-classical phononic crystal (PC) microbeam for the elastic wave bandgap generation is provided, incorporating microstructure, piezomagnetism, piezoelectricity and temperature effects. The wave equation of a general magneto-electro-elastic (MEE) phononic crystal microbeam is derived, which recovers piezoelectric- and piezomagnetic-based counterparts as special cases. The piezomagnetic and piezoelectric materials are periodically combined to construct the PC microbeam and corresponding bandgaps are obtained by using the plane wave expansion (PWE) method. The effects of the piezomagnetism, piezoelectricity, microstructure, geometrical parameters and applied multi-fields (e.g., external electric potential, external magnetic potential, temperature change) on the bandgaps are discussed. The numerical results reveal that the bandgap frequency is raised with the presence of piezo and microstructure effects. In addition, the geometry parameters play an important role on the bandgap. Furthermore, large bandgaps can be realized by adjusting the external electric and magnetic potentials at micron scale, and lower bandgap frequency can be realized through the temperature rise at all length scales.

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