Epitaxial Graphene on 4H-SiC (0001) as a Versatile Platform for Materials Growth: Mini-Review

Material growth on a dangling-bond-free interface such as graphene is a challenging technological task, which usually requires additional surface pre-treatment steps (functionalization, seed layer formation) to provide enough reactive sites. Being one of the most promising and adaptable graphene-family materials, epitaxial graphene on SiC, due to its internal features (substrate-induced n-doping, compressive strain, terrace-stepped morphology, bilayer graphene nano-inclusions), may provide pre-conditions for the enhanced binding affinity of environmental species, precursor molecules, and metal atoms on the topmost graphene layer. It makes it possible to use untreated pristine epitaxial graphene as a versatile platform for the deposition of metals and insulators. This mini-review encompasses relevant aspects of magnetron sputtering and electrodeposition of selected metals (Au, Ag, Pb, Hg, Cu, Li) and atomic layer deposition of insulating Al2O3 layers on epitaxial graphene on 4H-SiC, focusing on understanding growth mechanisms. Special deliberation has been given to the effect of the deposited materials on the epitaxial graphene quality. The generalization of the experimental and theoretical results presented here is hopefully an important step towards new electronic devices (chemiresistors, Schottky diodes, field-effect transistors) for environmental sensing, nano-plasmonics, and biomedical applications.

Automated summary

The growth of materials on a dangling-bond-free interface like graphene requires additional surface pre-treatment steps, but epitaxial graphene on SiC might offer better conditions. The study focuses on understanding the growth mechanisms through magnetron sputtering, electrodeposition, and atomic layer deposition, with the hope of contributing to the development of new electronic devices.