期刊
APPLIED SCIENCES-BASEL
卷 11, 期 15, 页码 -出版社
MDPI
DOI: 10.3390/app11156703
关键词
NAND flash memory; three-dimensional architecture; process integration
类别
资金
- National Research Foundation (NRF) - Korean Government [2019M3F3A1A03079821, 2020M3F3A2A01081656]
- Brain Korea 21 Four Program
- INHA UNIVERSITY Research Grant
- Institute for Information & Communication Technology Planning & Evaluation (IITP), Republic of Korea [2019M3F3A1A03079821] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2020M3F3A2A01081656] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
This paper reviews 3D NAND flash technologies in terms of their architecture and fabrication methods, comparing the advantages and disadvantages of the architectures.
In the past few decades, NAND flash memory has been one of the most successful nonvolatile storage technologies, and it is commonly used in electronic devices because of its high scalability and reliable switching properties. To overcome the scaling limit of planar NAND flash arrays, various three-dimensional (3D) architectures of NAND flash memory and their process integration methods have been investigated in both industry and academia and adopted in commercial mass production. In this paper, 3D NAND flash technologies are reviewed in terms of their architecture and fabrication methods, and the advantages and disadvantages of the architectures are compared.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据
分享论文
