Pure single-photon emission from an InGaN/GaN quantum dot

Single-photon emitters with high degrees of purity are required for photonic-based quantum technologies. InGaN/GaN quantum dots are promising candidates for the development of single-photon emitters but have typically exhibited emission with insufficient purity. Here, pulsed single-photon emission with high purity is measured from an InGaN quantum dot. A raw g((2))(0) value of 0.043 +/- 0.009 with no corrections whatsoever is achieved under quasi-resonant pulsed excitation. Such a low value is, in principle, sufficient for use in quantum key distribution systems. (c) 2021 Author(s).

Automated summary

High-purity pulsed single-photon emission has been measured from an InGaN quantum dot, showing promising potential for application in quantum key distribution systems.