Suppression of Hot-Carrier Effects Facilitated by the Multimodal Thin-Film Transistor Architecture

Hot-carrier effects are a persistent challenge for Ohmic contact, high carrier mobility thin-film transistors. As semiconductor properties are systematically improved, such phenomena (e.g., the kink effect) are becoming apparent even in materials such as InGaZnO. Few of the past solutions are practical in these low-complexity semiconductor systems. Here, it is shown that contact-controlled devices offer robust performance under extreme biasing conditions due to their distinctive charge injection processes. The recently-developed multimodal transistor (MMT) provides further control still, by separate regulation of current flow and magnitude. Internal electric field distributions in the source and drain regions are studied via technology computer-aided design simulations, and support the formulation of operational guidelines for the MMT's channel control gate for optimal characteristics in saturation. As MMT principles are universal, these findings should inform device design and operation in all high carrier mobility material systems.

Automated summary

This study demonstrates that contact-controlled devices exhibit robust performance under extreme biasing conditions, while the multimodal transistor (MMT) provides further control by independently regulating current flow and magnitude. Through technology computer-aided design simulations, the internal electric field distributions are studied and operational guidelines are formulated for optimal characteristics of the MMT. These universal principles should inform device design and operation in all high carrier mobility material systems.