期刊
ADVANCED ELECTRONIC MATERIALS
卷 7, 期 8, 页码 -出版社
WILEY
DOI: 10.1002/aelm.202100219
关键词
3-T synapse; ion diffusivity; ion-based synaptic transistor; neuromorphic computing; oxygen vacancy formation energy; sub-stoichiometric channel
资金
- U.S. Army International Technology Center Pacific [FA5209-20-C-0018]
- National Research Foundation of Korea [4199990514509] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
In this study, near-ideal synaptic characteristics are achieved in OIST devices by adopting oxygen-deficient transition metal-oxide channels and yttria-stabilized zirconia electrolytes. By decreasing the oxygen stoichiometry in the TMO channel, oxygen ion supply and migration are accelerated, leading to improved weight-update linearity and wide conductance range. The excellent pattern recognition accuracy in the OIST synapse array can be explained by the improved synaptic characteristics.
The oxygen ion-based synaptic transistor (OIST) is a promising candidate for next-generation synaptic devices for neuromorphic computing. However, the key process parameters that control synaptic characteristics have not yet been studied. In this study, the authors report near-ideal synaptic characteristics by adopting oxygen-deficient transition metal-oxide (TMO) channels and yttria-stabilized zirconia electrolytes. With decreasing oxygen stoichiometry in the TMO channel by controlling the O-2 flow rate during reactive sputtering, the oxygen ion supply and migration are accelerated by lowering the migration barrier. The reduced barrier energy and improved ion diffusivity characteristic in the oxygen-deficient TMO channels are confirmed experimentally through cyclic voltammetry analysis. As a result, improved weight-update linearity and wide conductance range can be achieved in OIST devices with an oxygen-deficient TMO (WO2.7, TiO1.7) channel. The authors confirm the excellent pattern recognition accuracy, which can be explained by the improved synaptic characteristics of the OIST synapse array.
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