Structural Characteristics of the Si Whiskers Grown by Ni-Metal-Induced-Lateral-Crystallization

Si whiskers grown by Ni-Metal-Induced-Lateral-Crystallization (Ni-MILC) were grown at 413 degrees C, intentionally below the threshold for Solid State Crystallization, which is 420 degrees C. These whiskers have significant common characteristics with whiskers grown by the Vapor Liquid Solid (VLS) method. The crystalline quality of the whiskers in both methods is the same. However, in VLS, a crystalline substrate is required, in contrast to the amorphous one in Ni-MILC for the growth of single crystalline whiskers. Moreover, whiskers grown by VLS have a polygonal cross-section with their diameter determined by the diameter of the hemispherical metallic catalysts. On the other hand, in the Ni-MILC, the cross-section of the whiskers depends on the size of the NiSi2 grain from which they are emanated. This was confirmed by observing the crossing whiskers and the rotational Moire patterns in the crossing area. The structure of disturbed short and thin nonlinear branches on the side-walls of the whiskers was studied. In the whiskers grown by the VLS method, significant contamination occurs by the metallic catalyst degrading the electrical characteristics of the whisker. Such Si whiskers are not compatible with the current CMOS process. Whiskers grown by Ni-MILC at 413 degrees C are also contaminated by Ni. However, the excess Ni is in the form of tetrahedral NiSi2 inclusions which are coherent with the Si matrix due to the very low misfit of 0.4% between them. These whiskers are compatible with current CMOS process and Thin Film Transistors (TFTs).

Automated summary

Si whiskers grown by Ni-Metal-Induced-Lateral-Crystallization (Ni-MILC) at 413 degrees C have different characteristics compared to those grown by the Vapor Liquid Solid (VLS) method, including crystalline quality and cross-section shape. While both methods face contamination issues, the Ni-MILC grown Si whiskers are more compatible with current CMOS processes.