☆ 4.7 Article

Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film

NANOMATERIALS (2021)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Article Materials Science, Ceramics

Modified resistive switching performance by increasing Al concentration in HfO2 on transparent indium tin oxide electrode

Chandreswar Mahata et al.

Summary: By controlling the Al ratio during atomic layer deposition, significant improvement in resistive switching behavior of Al-doped HfAlO-based RRAM devices was achieved, leading to enhanced on/off ratio and retention properties. Multilevel conductance modulation and synaptic properties of potentiation/depression were successfully demonstrated.

CERAMICS INTERNATIONAL (2021)

添加到收藏夹

Article Nanoscience & Nanotechnology

Effect of tungsten doping on the variability of InZnO conductive-bridging random access memory

Kai-Jhih Gan et al.

Summary: The doping ratio of tungsten significantly influences the memory characteristics of CBRAM, with 15% tungsten doping ratio showing excellent memory properties such as high cycling endurance, low operating voltage, and good retention capability. Additionally, the electrical uniformity and switching behavior of InWZnO devices are improved as the doping ratio of tungsten in the switching layer increases, indicating great potential for high-performance memory devices based on novel material InWZnO.

NANOTECHNOLOGY (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer

Te Jui Yen et al.

Summary: The study successfully achieved high-performance top-gate p-type TFT with excellent hole field-effect mobility and large on-current/off-current ratio, contributing to the development of monolithic 3D ICs on the backend dielectric of IC chips.

NANOMATERIALS (2021)

添加到收藏夹

Article Multidisciplinary Sciences

Charge transport mechanism in the forming-free memristor based on silicon nitride

Andrei A. Gismatulin et al.

Summary: The study shows that the charge transport mechanism in silicon nitride-based memristors is different from traditional models, and reveals the charge transport mechanisms in different states. The charge transport in different states of the silicon nitride-based memristor can be described by the space charge limited current model.

SCIENTIFIC REPORTS (2021)

添加到收藏夹

Article Materials Science, Multidisciplinary

Impact of annealing environment on performance of InWZnO conductive bridge random access memory

Chih-Chieh Hsu et al.

Summary: This paper investigates the characteristics of CBRAM with IWZO as the switching material in different annealing atmospheres. It is found that annealing in nitrogen atmosphere can significantly improve the endurance cycles and resistance uniformity of the devices, potentially showing promise for future integrated display circuit applications.

VACUUM (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

High-Performance Resistive Switching in Solution-Derived IGZO:N Memristors by Microwave-Assisted Nitridation

Shin-Yi Min et al.

Summary: In this study, IGZO:N nanocomposites were synthesized through microwave-assisted nitridation to improve memristive switching characteristics in the oxide-based RS layer. The IGZO:N memristors showed superior performance in repeated cycling tests and electrical synaptic operation, demonstrating the effectiveness of microwave annealing in enhancing resistive switching behavior.

NANOMATERIALS (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles

Muhammad Naqi et al.

Summary: The research presents a low-temperature processed three-terminal thin-film transistor non-volatile memory device using indium gallium zinc oxide semiconductor and gold nanoparticles as a floating gate layer, achieving reliable memory operations with a high memory window and stable endurance. The device demonstrates excellent properties in terms of large memory window, stable endurance, and long retention time, showing promising applications in futuristic non-volatile memory technology.

NANOMATERIALS (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Te-Jui Yen et al.

Summary: Arsenic ion implantation improves the set and reset voltage distributions in SiNx RRAM devices, leading to tighter cycle-to-cycle distribution among devices. The As+-implanted devices exhibit excellent performance at high temperatures and after numerous cycles, maintaining a large resistance window. The current-voltage characteristics indicate a space-charge-limited conduction mechanism, and a microscopic model involving defect-conductive paths explains the resistance switching behavior.

NANOMATERIALS (2021)

添加到收藏夹

Article Physics, Applied

Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology

Dun-Bao Ruan et al.

APPLIED PHYSICS LETTERS (2020)

添加到收藏夹

Article Engineering, Electrical & Electronic

Effect of Annealing Treatment on Performance of Ga2O3 Conductive-Bridging Random-Access Memory

Kai-Jhih Gan et al.

JOURNAL OF ELECTRONIC MATERIALS (2020)

添加到收藏夹

Article Nanoscience & Nanotechnology

Electronic structure and charge transport mechanism in a forming-free SiOx-based memristor

Andrei A. Gismatulin et al.

NANOTECHNOLOGY (2020)

添加到收藏夹

Article Materials Science, Multidisciplinary

Annealing effects on resistive switching of IGZO-based CBRAM devices

Kai-Jhih Gan et al.

VACUUM (2020)

添加到收藏夹

Article Chemistry, Multidisciplinary

Emulation of Biological Synapse Characteristics from Cu/AlN/TiN Conductive Bridge Random Access Memory

Hyojong Cho et al.

NANOMATERIALS (2020)

添加到收藏夹

Article Chemistry, Multidisciplinary

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

Chandreswar Mahata et al.

NANOMATERIALS (2020)

添加到收藏夹

Article Chemistry, Multidisciplinary

High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer

Te Jui Yen et al.

NANOMATERIALS (2020)

添加到收藏夹

Article Nanoscience & Nanotechnology

Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors

Dun-Boo Ruan et al.

ADVANCED ELECTRONIC MATERIALS (2019)

添加到收藏夹

Article Nanoscience & Nanotechnology

Performance Enhancement for Tungsten-Doped Indium Oxide Thin Film Transistor by Hydrogen Peroxide as Cosolvent in Room-Temperature Supercritical Fluid Systems

Dun-Bao Ruan et al.

ACS APPLIED MATERIALS & INTERFACES (2019)

添加到收藏夹

Article Physics, Applied

Investigation of resistive switching in copper/InGaZnO/Al2O3-based memristor

Kai-Jhih Gan et al.

APPLIED PHYSICS LETTERS (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process

Chao-Feng Liu et al.

NANOMATERIALS (2019)

添加到收藏夹

Article Multidisciplinary Sciences

Highly durable and flexible gallium-based oxide conductive-bridging random access memory

Kai-Jhih Gan et al.

SCIENTIFIC REPORTS (2019)

添加到收藏夹

Article Materials Science, Multidisciplinary

Electrical properties of the HfO2-Al2O3 nanolaminates with homogeneous and graded compositions on InP

Chandreswar Mahata et al.

CURRENT APPLIED PHYSICS (2016)

添加到收藏夹

Article Physics, Applied

Multilevel unipolar resistive memory switching in amorphous SmGdO3 thin film

Yogesh Sharma et al.

APPLIED PHYSICS LETTERS (2014)

添加到收藏夹

Article Engineering, Electrical & Electronic

Metal-Oxide RRAM

H. -S. Philip Wong et al.

PROCEEDINGS OF THE IEEE (2012)

添加到收藏夹

Article Multidisciplinary Sciences

Observation of conducting filament growth in nanoscale resistive memories

Yuchao Yang et al.

NATURE COMMUNICATIONS (2012)

添加到收藏夹

Review Materials Science, Multidisciplinary

Review Paper: Transparent Amorphous Oxide Semiconductor Thin Film Transistor

Jang-Yeon Kwon et al.

ELECTRONIC MATERIALS LETTERS (2011)

添加到收藏夹

Review Chemistry, Physical

Nanoionics-based resistive switching memories

RaineR Waser et al.

NATURE MATERIALS (2007)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.