High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy

In this paper, a two-dimensional (2D) planar scanning capacitance microscopy (SCM) method is used to visualize with a high spatial resolution the channel region of large-area 4H-SiC power MOSFETs and estimate the homogeneity of the channel length over the whole device perimeter. The method enabled visualizing the fluctuations of the channel geometry occurring under different processing conditions. Moreover, the impact of the ion implantation parameters on the channel could be elucidated.

Automated summary

In this paper, a two-dimensional planar scanning capacitance microscopy (SCM) method was used to visualize the channel region of large-area 4H-SiC power MOSFETs with high spatial resolution and estimate the homogeneity of the channel length over the entire device perimeter. The method allowed for observing fluctuations in the channel geometry under different processing conditions, as well as elucidating the impact of ion implantation parameters on the channel.