Properties of CrSi2 Layers Obtained by Rapid Heat Treatment of Cr Film on Silicon

The changes in the morphology and the electrophysical properties of the Cr/n-Si (111) structure depending on the rapid thermal treatment were considered in this study. The chromium films of about 30 nm thickness were deposited via magnetron sputtering. The rapid thermal treatment was performed by the irradiation of the substrate's back side with the incoherent light flux of the quartz halogen lamps in nitrogen medium up to 200-550 degrees C. The surface morphology was investigated, including the grain size, the roughness parameters and the specific surface energy using atomic force microscopy. The resistivity value of the chromium films on silicon was determined by means of the four-probe method. It was established that at the temperatures of the rapid thermal treatment up to 350 degrees C one can observe re-crystallization of the chromium films with preservation of the fine grain morphology of the surface, accompanied by a reduction in the grain sizes, specific surface energy and the value of specific resistivity. At the temperatures of the rapid thermal treatment from 400 to 550 degrees C there originates the diffusion synthesis of the chromium disilicide CrSi2 with the wave-like surface morphology, followed by an increase in the grain sizes, roughness parameters, the specific surface energy and the specific resistivity value.

Automated summary

The study examined the changes in the morphology and electrophysical properties of the Cr/n-Si (111) structure under different rapid thermal treatment conditions. Results showed that below 350 degrees Celsius, re-crystallization of the chromium films occurs with reduced grain sizes, specific surface energy and resistivity, while at temperatures between 400 and 550 degrees Celsius, diffusion synthesis of chromium disilicide leads to increased grain sizes, roughness parameters, specific surface energy and resistivity.