4.7 Article

Tunable Narrowband Silicon-Based Thermal Emitter with Excellent High-Temperature Stability Fabricated by Lithography-Free Methods

期刊

NANOMATERIALS
卷 11, 期 7, 页码 -

出版社

MDPI
DOI: 10.3390/nano11071814

关键词

narrowband thermal emitter; Tamm plasmon polaritons; wavelength selective; lithography-free; thermal stability

资金

  1. National Natural Science Foundation of China (NSFC) [61735008, 61921005, 11774155]
  2. National Key R&D Program of China [2018YFB2200101]

向作者/读者索取更多资源

This study demonstrates a tunable narrowband thermal emitter based on a fully planar Si-W-SiN/SiNO multilayer structure, which exhibits narrowband absorption, high-temperature stability, and potential applications in various photonics and thermal applications.
Thermal emitters with properties of wavelength-selective and narrowband have been highly sought after for a variety of potential applications due to their high energy efficiency in the mid-infrared spectral range. In this study, we theoretically and experimentally demonstrate the tunable narrowband thermal emitter based on fully planar Si-W-SiN/SiNO multilayer, which is realized by the excitation of Tamm plasmon polaritons between a W layer and a SiN/SiNO-distributed Bragg reflector. In conjunction with electromagnetic simulations by the FDTD method, the optimum structure design of the emitter is implemented by 2.5 periods of DBR structure, and the corresponding emitter exhibits the nearly perfect narrowband absorption performance at the resonance wavelength and suppressed absorption performance in long wave range. Additionally, the narrowband absorption peak is insensitive to polarization mode and has a considerable angular tolerance of incident light. Furthermore, the actual high-quality Si-W-SiN/SiNO emitters are fabricated through lithography-free methods including magnetron sputtering and PECVD technology. The experimental absorption spectra of optimized emitters are found to be in good agreement with the simulated absorption spectra, showing the tunable narrowband absorption with all peak values of over 95%. Remarkably, the fabricated Si-W-SiN/SiNO emitter presents excellent high-temperature stability for several heating/cooling cycles confirmed up to 1200 K in Ar ambient. This easy-to-fabricate and tunable narrowband refractory emitter paves the way for practical designs in various photonic and thermal applications, such as thermophotovoltaic and IR radiative heaters.

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