Energy-Dependent Time-Resolved Photoluminescence of Self-Catalyzed InN Nanocolumns

In this study, we report the optical properties and carrier dynamics of different surface dimensionality n-type wurtzite InN with various carrier concentrations using photoluminescence (PL) and an energy-dependent, time-resolved photoluminescence (ED-TRPL) analysis. Experimental results indicated that the InN morphology can be controlled by the growth temperature, from one-dimensional (1D) nanorods to two-dimensional (2D) films. Moreover, donor-like nitrogen vacancy (V-N) is responsible for the increase in carrier concentration due to the lowest formation energies in the n-type InN samples. The PL results also reveal that the energies of emission peaks are higher in the InN samples with 2D features than that with 1D features. These anomalous transitions are explained as the recombination of Mahan excitons and localized holes, and further proved by a theoretical model, activation energy and photon energy-dependent lifetime analysis.

Automated summary

This study investigates the optical properties and carrier dynamics of n-type wurtzite InN with different surface dimensions using photoluminescence and time-resolved photoluminescence analysis. The morphology of InN can be controlled by growth temperature, leading to variations in carrier concentration and emission peak energies. The increase in carrier concentration in InN samples with 2D features is attributed to the presence of donor-like nitrogen vacancies, while the higher emission peak energies are explained by the recombination of Mahan excitons and localized holes in different dimensional structures.