Stable Field Electron Emission and Plasma Illumination from Boron and Nitrogen Co-Doped Edge-Rich Diamond-Enhanced Carbon Nanowalls

Superior field electron emission (FEE) characteristics are achieved in edge-rich diamond-enhanced carbon nanowalls (D-ECNWs) grown in a single-step chemical vapor deposition process co-doped with boron and nitrogen. The structure consists of sharp, highly conductive graphene edges supplied by a solid, diamond-rich bottom. The Raman and transmission electron microscopy studies reveal a hybrid nature of sp(3)-diamond and sp(2)-graphene in these nanowalls. The ab-initio calculations were carried out to support the experimental observations of diamond-graphene hybrid structure. Finally, this hybrid D-ECNWs is employed as a cathode in an FEE device resulting in a low turn-on field of 3.1 V mu m(-1), a large field enhancement factor, a high FEE J(e) of 2.6 mA cm(-2), and long lifetime stability of 438 min. Such an enhancement in the FEE originates from the unique materials combination, resulting in good electron transport from the graphene phases and efficient FEE of electrons from the sharp edges on the nanowalls. The prospective application of these materials is displayed by employing these hybrids as cathodes in a microplasma device ensuing a low threshold voltage of 160 V and high plasma stability of 140 min, which confirms the role of these hybrid structured nanowalls in the enhancement of electron emission.

Automated summary

Superior field electron emission characteristics were achieved in edge-rich diamond-enhanced carbon nanowalls grown in a single-step chemical vapor deposition process co-doped with boron and nitrogen. The hybrid nature of sp(3)-diamond and sp(2)-graphene in these nanowalls was revealed by Raman and transmission electron microscopy studies. Ab-initio calculations supported the experimental observations of diamond-graphene hybrid structure.