期刊
ACS PHOTONICS
卷 8, 期 10, 页码 3104-3110出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.1c01168
关键词
black phosphorus; photonic crystal cavity; photodetector; 2D materials; silicon photonics
类别
资金
- Key Research and Development Program [2018YFA0307200]
- National Natural Science Foundations of China [61775183, 11634010, 61905196]
- Key Research and Development Program in Shaanxi Province of China [2020JZ-10]
- Fundamental Research Funds for the Central Universities [3102019JC008, 3102018jcc034, 310201911cx032]
The study demonstrated the integration of a black phosphorus photodetector on a silicon planar photonic crystal cavity to improve performance. The device benefited from cavity-enhanced light-BP interaction, resulting in a compact footprint, high responsivity, low dark current, and high speed. The results indicate the potential of BP photodetectors integrated on planar photonic crystal cavities for constructing compact on-chip photodetectors in photonic integrated circuits.
We report the integration of a black phosphorus (BP) photodetector on a silicon planar photonic crystal cavity for improving the performance. Benefiting from the cavity-enhanced light-BP interaction, the device has a compact footprint, promising high responsivity, low dark current, and high speed. With an on-resonance excitation, the photodetection is enhanced by 36 times over that obtained with the off-resonance excitation. Under a bias of 0.5 V, the photodetector has a responsivity of similar to 125 mA W-1 with a dark current lower than 20 nA thanks to the short BP channel. Relying on BP's high carrier mobility and the compact device structure, a high speed with a 3 dB bandwidth exceeding similar to 1.42 GHz is obtained, which is limited by our instrument response. Our results indicate the BP photodetector integrated on a planar photonic crystal cavity has potential for constructing a compact on-chip photodetector of photonic integrated circuits.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据