Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures

This research proposes a novel 4H-SiC power device structure-different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static characteristics of the traditional vertical MOSFET, DC-FSJ MOSFET has a higher breakdown voltage (BV) and lower forward specific on-resistance (R-on,R-sp). The DC-FSJ MOSFET is formed by multiple epitaxial technology to create a floating P-type structure in the epitaxial layer. Then, a current spreading layer (CSL) is added to reduce the R-on,R-sp. The floating P-type structure depth, epitaxial layer concentration and thickness are optimized in this research. This structure can not only achieve a breakdown voltage over 3300 V, but also reduce R-on,R-sp. Under the same conditions, the Baliga Figure of Merit (BFOM) of DC-FSJ MOSFET increases by 27% compared with the traditional vertical MOSFET. R-on,R-sp is 25% less than that of the traditional vertical MOSFET.

Automated summary

This research proposes a novel 4H-SiC power device structure called different concentration floating superjunction MOSFET (DC-FSJ MOSFET), which has a higher breakdown voltage and lower forward specific on-resistance compared to traditional vertical MOSFET. By optimizing the depth, concentration, and thickness of the floating P-type structure, DC-FSJ MOSFET achieves a breakdown voltage over 3300V and reduced R-on,R-sp. Additionally, the Baliga Figure of Merit (BFOM) of DC-FSJ MOSFET increases by 27% and R-on,R-sp is 25% less than traditional vertical MOSFET under the same conditions.