Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride

Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgFx) as the resistive switching layer are reported. The electroforming-free MgFx based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 10(2) and good data retention of >10(4) s. The resistive switching mechanism in the Ti/MgFx/Pt devices combines two processes as well as trap-controlled space charge limited conduction (SCLC), which is governed by pre-existing defects of fluoride vacancies in the bulk MgFx layer. In addition, filamentary switching mode at the interface between the MgFx and Ti layers is assisted by O-H group-related defects on the surface of the active layer.

Automated summary

This study presents electroforming-free resistive switching random access memory (RRAM) devices utilizing magnesium fluoride (MgFx) as the resistive switching layer, which exhibit bipolar SET/RESET operational characteristics with a high on/off ratio. The resistive switching mechanism is governed by pre-existing defects of fluoride vacancies in the MgFx layer, as well as O-H group-related defects on the surface of the active layer.