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Improved mobilities and resistivities in modulation-doped p-type AlGaN/GaN superlattices
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APPLIED PHYSICS LETTERS (2001)
Growth and deep ultraviolet picosecond time-resolved photoluminescence studies of AlN/GaN multiple quantum wells
KB Nam et al.
APPLIED PHYSICS LETTERS (2001)
Optical gain and stimulated emission in nanocrystal quantum dots
VI Klimov et al.
SCIENCE (2000)
Spontaneous polarization and piezoelectric field in GaN/Al0.15Ga0.85N quantum wells:: Impact on the optical spectra
R Cingolani et al.
PHYSICAL REVIEW B (2000)