A Low-Loss Silicon MEMS Phase Shifter Operating in the 550-GHz Band

This article presents a low-loss silicon microelectrical mechanical system (MEMS) phase shifter operating in the 500-600 GHz band. The phase shifter consists of a 30-mu m thick perforated silicon slab that is moved in and out of a waveguide in the E-plane with a large deflection MEMS actuator. By implementing different hexagonal patterns in the silicon slab, a stepped permittivity is created to impedance match, and thus, reduce return loss. When the silicon slab is inserted into the waveguide, the phase velocity of the incoming wave is decreased, thus resulting in different phase shifts depending on the position of the slab inside the waveguide. The MEMS phase shifter is fully actuated at around 50 V and can move up to +/- 95 mu m, depending on the applied voltage. The insertion loss, when the maximum phase shift is achieved, is measured to be 1.8 dB, compared to a 1.6-dB insertion loss for a waveguide of equivalent length. The return loss is better than 18 dB for the desired band. The measured phase shift, with the slab fully inserted into the waveguide at 550 GHz was 145 degrees. The MEMS phase shifter enables a variety of applications including phased array antenna systems with scanning capability for mapping of planetary surfaces with an electronically steerable antenna.

Automated summary

This article introduces a low-loss silicon MEMS phase shifter operating in the 500-600 GHz band, capable of achieving different phase shifts by moving a silicon slab inside a waveguide. The phase shifter is fully actuated at 50 V, can achieve large displacement, and performs well in the desired frequency band.