期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 11, 期 5, 页码 1158-1166出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2021.3082400
关键词
Photovoltaic cells; Passivation; Lighting; Sun; Photovoltaic systems; Loss measurement; Current density; Metal-oxides; molybdenum oxide; passivating contact; passivation; selectivity; silicon heterojunction (SHJ); solar cells
资金
- Swiss National Science Foundation under Ambizione Energy Grant ICONS [PZENP2_173627]
- Swiss National Science Foundation [200021L_172924/1]
- National Council for Scientific and Technological Development under Grant CNPq-Brazil
- Federal Commission for Scholarships for Foreign Students (FCS-Switzerland)
- Swiss National Science Foundation (SNF) [200021L_172924] Funding Source: Swiss National Science Foundation (SNF)
The study found that the optimal efficiency is achieved with a MoOx layer thickness of 4 nm, outperforming thicker layers. However, MoOx films thinner than 4 nm lead to a loss of passivation and selectivity.
We recently showed that silicon heterojunction solar cell with MoOx-based hole-selective contact could reach 23.5% in efficiency with MoOx layers of 4 nm. Such thin MoOx layer enables a considerable current-density gain of over 1 mA/cm(2) compared to the use of p-type amorphous silicon, and outperforms thicker MoOx layers. In this article, we investigated the impact of the MoOx hole-selective layer for thickness between 0 and 4 nm. Based on optoelectrical characterization of the device at various processing stage, we discuss the optical and electrical effects of such variation on the solar-cell performances. We notably identify a loss of passivation and selectivity for MoOx films thinner than 4 nm, that we link to a reduced work-function for such thin MoOx films. We confirm experimentally that the optimal MoOx thickness is around 4 nm, yet evidence that close to 0.5 mA/cm(2) is still parasitically absorbed in such a thin layer.
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