期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 11, 期 5, 页码 1291-1298出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2021.3086439
关键词
Silicon; Monitoring; Correlation; Etching; Temperature measurement; Surface texture; Semiconductor device modeling; Black silicon (B-Si); silicon nanotexture; spatial mapping; surface area; ultraviolet (UV) reflectance
资金
- Australian Government through the Australian Renewable Energy Agency [2017/RND009]
This study demonstrates a correlation between silicon's ultraviolet reflectance peak R(E2) and enhanced area factor (EAF) for high-resolution spatial mapping of silicon nanotextures, as well as the impact of nanotexture spatial variation on post-diffusion sheet resistance. Finite-difference time-domain simulations confirm the correlation, suggesting the potential usefulness of R(E2) mapping for other silicon nanotexture properties and applications where EAF is important.
The enhanced surface area of silicon nanotexture is an important metric for solar cell integration as it affects multiple properties including optical reflectance, dopant diffusion, and surface recombination. Silicon nanotexture is typically characterized by its surface-area-to-projected-area ratio or enhanced area factor (EAF). However, traditional approaches for measuring EAF provide limited statistics, making correlation studies difficult. In this article, silicon's dominant ultraviolet reflectance peak, R(E2), which is very sensitive to surface etching, is applied to EAF spatial mapping. A clear decay correlation between R(E2) and EAF is shown for multiple textures created using reactive ion etching and metal catalyzed chemical etching. This correlation is applied to R(280 nm) reflectance mapping to yield accurate, high-resolution full-wafer EAF spatial mapping of silicon nanotextures. R(280 nm) mapping is also shown to be sensitive enough to correlate the impact of nanotexture spatial variation on post-diffusion sheet resistance. Finite-difference time-domain simulations of several nanoscale pyramid textures confirm a decay band for R(E2) versus EAF, consistent with our measurements. We suggest that R(E2) mapping may prove useful for other silicon nanotexture properties and applications where EAF is important.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据