4.4 Article

Effects of H2O2 and pH on the Chemical Mechanical Planarization of Molybdenum

出版社

ELECTROCHEMICAL SOC INC
DOI: 10.1149/2162-8777/ac26d3

关键词

molybdenum; CMP; hydrogen peroxide; chronoamperometry

资金

  1. MOTIE (Ministry of Trade, Industry, and Energy) in Korea, under the Fostering Global Talents for Innovative Growth Program [P0008745]
  2. Ministry of Health & Welfare (MOHW), Republic of Korea [P0008745] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

The study revealed that H2O2 promotes the dissolution of Mo oxides and formation of peroxo Mo complexes. CMP showed higher removal rates at different pH levels, with pH 2 exhibiting lower SER and lower surface roughness.
The effects of H2O2 on the chemical etching and removal rate (RR) of molybdenum (Mo) were investigated. Static etch rate (SER) and chemical mechanical planarization (CMP) experiments were performed using H2O2-based slurries at different pH levels. X-ray photoelectron spectroscopy (XPS) and potentiodynamic polarization analysis showed the formation of Mo oxides by the reaction between Mo and H2O2. The Mo SER, which increased with H2O2 concentration, supported the dissolution of Mo oxides through the formation of peroxo Mo complexes with H2O2. The CMP removal mechanism was demonstrated by comparing the CMP RR with and without silica abrasives. In addition, the Mo oxidation rate by H2O2 on a millisecond time scale was characterized with chronoamperometry to explain different RRs at pH values ranging from 2 to 8. The CMP RR of Mo was high at pH 2 and pH 10; however, pH 2 showed a lower SER than pH 10, leading to lower surface roughness.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据