4.6 Article

Gate Tunable Coupling of Epsilon-Near-Zero and Plasmonic Modes

期刊

ADVANCED OPTICAL MATERIALS
卷 9, 期 22, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.202100800

关键词

epsilon-near-zero mode; epsilon-near-zero materials; gating; indium tin oxide; plasmonic mode; strong coupling

资金

  1. Academy of Finland Flagship Programme (PREIN) [320165]
  2. European Research Councill (Starting Grant project a QUARiUM) [802986]
  3. Finnish National Agency for Education through an EDUFI Fellowship
  4. Finnish Cultural Foundation
  5. European Research Council (ERC) [802986] Funding Source: European Research Council (ERC)

向作者/读者索取更多资源

This work demonstrates the active tuning of coupling strength in a strongly coupled system comprised of a thin epsilon-near-zero material and gold nanorods. A novel gating scheme using an ionic liquid is developed to bias the system and tune the coupling in transmission mode, resulting in a significant tuning of the coupled resonance up to 30 nm by changing bias voltages from 0 to 4.5 V. This control mechanism on strong coupling offers exciting opportunities for various disruptive applications by providing advanced control and tunability.
In this work, an active tuning of the coupling strength in a strongly coupled system comprised of a thin epsilon-near-zero material and gold nanorods as plasmonic resonators is demonstrated. A novel gating scheme is developed where an ionic liquid is employed to bias the coupled system and tune the coupling in transmission mode. A significant tuning of the coupled resonance up to 30 nm is observed by changing the bias voltages from 0 to 4.5 V. This control mechanism on strong coupling opens exciting opportunities for various disruptive applications by offering advanced control and tunability on strongly coupled systems.

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