Process Dependent Strain Behaviour, Fractal Analysis, and Bonding Network of Nc-Si(SiC) Thin Films

Nanocrystalline silicon embedded silicon carbide, nc-Si(SiC) thin films were deposited on p-type silicon substrates by using a thermal chemical vapor deposition (CVD) with different process temperatures from 700 to 1000 degrees C. The SEM images reveal the Si particles are embedded with SiC thin films. The estimated crystallite size of nc-Si(SiC) was varied from 14 to 28 nm and 40.7 to 61 nm respectively from the Scherrer formula and Williamson - Hall formula. Similarly, the estimated lattice-strain of nc-Si(SiC) thin films from Williamson-Hall and Bragg law was varied from 0.00227 to 0.00469 and 0.000855 to 0.00574 respectively. The Raman signature at the 1346.19 cm(-1), 1491.78 cm(-1,) and 1570.94 cm(-1) bonding correspond to D, G-Si, and G peaks respectively. The estimated bandgap from Tauc's plot of nc-Si(SiC) thin films are 3.17 to 2.87 eV respectively with increasing process temperature. The possible bonding network of core-orbital of Si(2p), C(1 s), and O(1 s) in the nc-Si(SiC) thin films have been discussed by deconvolution with the Origin 2018.

Automated summary

In this study, nc-Si(SiC) thin films were deposited using CVD at different process temperatures. Various characteristics of the thin films were observed and parameters such as crystallite size, lattice-strain, Raman peaks, and bandgap range were estimated.