Pressure Sensors Using Si/ZnO Heterojunction Diode

In nanoregime, heterojunction diodes have efficient applications in design and fabrication of sensors. Heterojunction diodes are formed by fusing two dissimilar semiconductors. Based on the combination of the materials used, these heterostructures find applications in bioelectronics and miniaturized sensors. In the literature, many different combinations are prevailing -GaN/AlGaN, Au/ZnO, NiO/ZnO. In this paper, a heterojunction diode is designed using Si/ ZnO combination and for the first time,the device is discovered to be used as pressure sensors.. The IV characteristics, energy band profile and CV curves of Si/ZnO is studied, analyzed and validated using TCAD-ATLAS software. This paper also proves that the performance of the device fits well for pressure sensing applications using COMSOL software.

Automated summary

Heterojunction diodes have efficient applications in sensors design and fabrication at the nanoscale. These heterostructures, formed by merging two dissimilar semiconductors, find uses in bioelectronics and miniaturized sensors based on material combinations.