4.7 Article

Hybrid external-cavity lasers (ECL) using photonic wire bonds as coupling elements

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SCIENTIFIC REPORTS
卷 11, 期 1, 页码 -

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NATURE PORTFOLIO
DOI: 10.1038/s41598-021-95981-w

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资金

  1. Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany's Excellence Strategy via the Excellence Cluster 3D Matter Made to Order [EXC-2082/1-390761711]
  2. Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) through the Collaborative Research Centre (CRC) WavePhenomena [1173]
  3. Bundesministerium fur Bildung und Forschung (BMBF) [13N14630, 16ES0948]
  4. European Research Council (ERC Consolidator Grant 'TeraSHAPE') [773248]
  5. H2020 Photonic Packaging Pilot Line PIXAPP [731954]
  6. Karlsruhe School of Optics and Photonics (KSOP)
  7. Alfried Krupp von Bohlen und Halbach Foundation
  8. European Research Council (ERC) [773248] Funding Source: European Research Council (ERC)

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This paper presents a novel hybrid ECL utilizing 3D-printed photonic wire bonds as intra-cavity coupling elements to overcome technological challenges. The research demonstrates that photonic wire bonds enable low-loss coupling, leading to wide single-mode tuning range, high side mode suppression ratios, and low intrinsic linewidths.
Combining semiconductor optical amplifiers (SOA) on direct-bandgap III-V substrates with low-loss silicon or silicon-nitride photonic integrated circuits (PIC) has been key to chip-scale external-cavity lasers (ECL) that offer wideband tunability along with small optical linewidths. However, fabrication of such devices still relies on technologically demanding monolithic integration of heterogeneous material systems or requires costly high-precision package-level assembly, often based on active alignment, to achieve low-loss coupling between the SOA and the external feedback circuits. In this paper, we demonstrate a novel class of hybrid ECL that overcome these limitations by exploiting 3D-printed photonic wire bonds as intra-cavity coupling elements. Photonic wire bonds can be written in-situ in a fully automated process with shapes adapted to the mode-field sizes and the positions of the chips at both ends, thereby providing low-loss coupling even in presence of limited placement accuracy. In a proof-of-concept experiment, we use an InP-based reflective SOA (RSOA) along with a silicon photonic external feedback circuit and demonstrate a single-mode tuning range from 1515 to 1565 nm along with side mode suppression ratios above 40 dB and intrinsic linewidths down to 105 kHz. Our approach combines the scalability advantages of monolithic integration with the performance and flexibility of hybrid multi-chip assemblies and may thus open a path towards integrated ECL on a wide variety of integration platforms.

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