Recent progress in the development of β-Ga2O3 scintillator crystals grown by the Czochralski method

A high-quality bulk single crystal of 13-Ga2O3 has been grown by the Czochralski method and its basic scintillation characteristics (light yield, energy resolution, proportionality, and scintillation decay times) have been investigated. All the samples cut from the crystal show promising scintillation yields between 8400 and 8920 ph/MeV, which is a noticeable step forward compared to previous studies. The remaining parameters, i.e. the energy resolution slightly above 10% (at 662 keV) and the scintillation mean decay time just under 1 mu s, are at the same level as we have formerly recognized for 13-Ga2O3. The proportionality of yield seems not to deviate from standards determined by other commercial scintillators. (c) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Automated summary

A high-quality bulk single crystal of 13-Ga2O3 has been grown using the Czochralski method and shows promising scintillation yields in terms of light yield, energy resolution, proportionality, and scintillation decay times. The crystal exhibits improved scintillation yields compared to previous studies, with energy resolution slightly above 10% and scintillation mean decay time just under 1 μs, while maintaining proportionality similar to other commercial scintillators.