4.6 Article

Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing

期刊

MATERIALS
卷 14, 期 17, 页码 -

出版社

MDPI
DOI: 10.3390/ma14175107

关键词

microstructure; cavities; he implantation; annealing

资金

  1. National Natural Science Foundation of China [12075194]
  2. Sichuan Science and Technology Program [2020ZYD055]
  3. Guangzhou Basic and Applied Basic Research Program [202102080179]

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In this study, structural defects in silicon implanted with helium ions at 600 degrees C and then annealed at 1000 degrees C were investigated using transmission electron microscopy. After annealing, rod-like defects decreased while tangled dislocations and large dislocation loops appeared. The shape of cavities transitioned from octahedron to tetrakaidecahedron, and stacking-fault tetrahedrons were found.
Si single crystal was implanted with 230 keV He+ ions to a fluence of 5 x 10(16)/cm(2) at 600 degrees C. The structural defects in Si implanted with He at 600 degrees C and then annealed at 1000 degrees C were investigated by transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The microstructure of an as-implanted sample is provided for comparison. After annealing, rod-like defects were diminished, while tangled dislocations and large dislocation loops appeared. Dislocation lines trapped by cavities were directly observed. The cavities remained stable except for a transition of shape, from octahedron to tetrakaidecahedron. Stacking-fault tetrahedrons were found simultaneously. Cavity growth was independent of dislocations. The evolution of observed lattice defects is discussed.

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