On the Junction Temperature Extraction Approach With a Hybrid Model of Voltage-Rise Time and Voltage-Rise Loss

Temperature sensitive electrical parameter (TSEP) approaches are widely employed in the junction temperature (T-j) detection and prediction of power devices, especially the switching parameter. In this article, the voltage-rise time and its loss during the turn-off process are used as the TSEP index for the detection of junction temperature because of the coupling relationship with the maximum junction temperature. In addition, the effect of junction temperature on the current-fall time and its loss is compared. The theoretical analysis is verified by SABER simulation and H-bridge inverter circuit platform. It is established that the model based on voltage-rise time (t(rv)) and voltage-rise loss (E-rv) is a viable model with good linearity, fixed sensitivity, and offers nondestructive insulated gate bipolar translator (IGBT) junction temperature extraction.

Automated summary

The article introduces a method based on voltage-rise time and loss of power devices for detection and prediction of junction temperature. The model based on voltage-rise time and loss is verified to have good linearity, fixed sensitivity, and can provide nondestructive IGBT junction temperature extraction through theoretical analysis and simulation verification.