4.8 Article

Unveiling Roles of Tin Fluoride Additives in High-Efficiency Low-Bandgap Mixed Tin-Lead Perovskite Solar Cells

期刊

ADVANCED ENERGY MATERIALS
卷 11, 期 29, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.202101045

关键词

low-bandgap perovskites; mixed Sn; -Pb; perovskite solar cells; Sn; (2+) oxidation; topological growth

资金

  1. National Key Research and Development Program of China [2019YFE0120000]
  2. Fundamental Research Funds for the Central Universities [YJ201955, YJ201722]
  3. Science and Technology Program of Sichuan Province [2020JDJQ0030, 2020YFH0079, 2019ZDZX0015]
  4. National Natural Science Foundation of China [62005188, U1804132]
  5. Engineering Featured Team Fund of Sichuan University [2020SCUNG102]
  6. Natural Science Foundation of Jiangsu Province [BK20190825]
  7. Ministry of Science and Culture (MWK) of Lower Saxony, Germany within SMART BIOTECS alliance
  8. Swiss Federal Office of Energy (SFOE)-BFE [SI/501805-01]

向作者/读者索取更多资源

This study reveals the roles of SnF2 in low-bandgap mixed tin-lead perovskite films and efficient devices, including regulating growth mode, preventing oxidation, reducing defects, and improving carrier lifetime.
Low-bandgap mixed tin-lead perovskite solar cells (PSCs) have been attracting increasing interest due to their appropriate bandgaps and promising application to build efficient all-perovskite tandem cells, an effective way to break the Shockley-Queisser limit of single-junction cells. Tin fluoride (SnF2) has been widely used as a basis along with various strategies to improve the optoelectronic properties of low-bandgap Sn-Pb perovskites and efficient cells. However, fully understanding the roles of SnF2 in both films and devices is still lacking and fundamentally desired. Here, the functions of SnF2 in both low-bandgap (FASnI(3))(0.6)(MAPbI(3))(0.4) perovskite films and efficient devices are unveiled. SnF2 regulates the growth mode of low-bandgap Sn-Pb perovskite films, leading to highly oriented topological growth and improved crystallinity. Meanwhile, SnF2 prevents the oxidation of Sn2+ to Sn4+ and reduces Sn vacancies, leading to reduced background hole density and defects, and improved carrier lifetime, thus largely decreasing nonradiative recombination. Additionally, the F- ion preferentially accumulates at hole transport layer/perovskite interface with high SnF2 content, leading to more defects. This work provides in-depth insights into the roles of SnF2 additives in low-bandgap Sn-Pb films and devices, assisting in further investigations into multiple additives and approaches to obtain efficient low-bandgap PSCs.

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