期刊
NATURE COMMUNICATIONS
卷 12, 期 1, 页码 -出版社
NATURE PORTFOLIO
DOI: 10.1038/s41467-021-25802-1
关键词
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资金
- Quantum Materials for Energy Efficient Neuromorphic Computing (Q-MEEN-C), an Energy Frontier Research Center - U.S. Department of Energy, Office of Science, Basic Energy Sciences [DE-SC0019273]
- French Agence Nationale de la Recherche MoMA project [ANR-19-CE30-0020]
The authors investigate a unique type of metal-to-insulator resistive switching in (La,Sr)MnO3, where an insulating barrier perpendicular to the current is formed. By electrically inducing a transverse barrier, a novel approach to voltage-controlled magnetism is demonstrated, allowing for local on/off control of ferromagnetism.
Resistive switching usually occurs by the formation of conducting filaments in the direction of current flow. Here the authors study an intriguing type of volatile metal-to-insulator resistive switching in (La,Sr)MnO3, which occurs by the formation of an insulating barrier perpendicular to the current. Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of a conducting filament parallel to the current flow, is a highly active research topic. Using the magneto-optical Kerr imaging, we found that the opposite type of resistive switching, from a metal into an insulator, occurs in a reciprocal characteristic spatial pattern: the formation of an insulating barrier perpendicular to the driving current. This barrier formation leads to an unusual N-type negative differential resistance in the current-voltage characteristics. We further demonstrate that electrically inducing a transverse barrier enables a unique approach to voltage-controlled magnetism. By triggering the metal-to-insulator resistive switching in a magnetic material, local on/off control of ferromagnetism is achieved using a global voltage bias applied to the whole device.
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