4.8 Article

Highly-efficient electrically-driven localized surface plasmon source enabled by resonant inelastic electron tunneling

期刊

NATURE COMMUNICATIONS
卷 12, 期 1, 页码 -

出版社

NATURE RESEARCH
DOI: 10.1038/s41467-021-23512-2

关键词

-

向作者/读者索取更多资源

Efficient on-chip localized plasmonic excitation based on resonant inelastic electron tunneling with metallic quantum well junction has been demonstrated, promising high external quantum efficiency and potentially advancing plasmonic circuitry and optical sensing applications.
On-chip plasmonic circuitry offers a promising route to meet the ever-increasing requirement for device density and data bandwidth in information processing. As the key building block, electrically-driven nanoscale plasmonic sources such as nanoLEDs, nanolasers, and nanojunctions have attracted intense interest in recent years. Among them, surface plasmon (SP) sources based on inelastic electron tunneling (IET) have been demonstrated as an appealing candidate owing to the ultrafast quantum-mechanical tunneling response and great tunability. However, the major barrier to the demonstrated IET-based SP sources is their low SP excitation efficiency due to the fact that elastic tunneling of electrons is much more efficient than inelastic tunneling. Here, we remove this barrier by introducing resonant inelastic electron tunneling (RIET)-follow a recent theoretical proposal-at the visible/near-infrared (NIR) frequencies and demonstrate highly-efficient electrically-driven SP sources. In our system, RIET is supported by a TiN/Al2O3 metallic quantum well (MQW) heterostructure, while monocrystalline silver nanorods (AgNRs) were used for the SP generation (localized surface plasmons (LSPs)). In principle, this RIET approach can push the external quantum efficiency (EQE) close to unity, opening up a new era of SP sources for not only high-performance plasmonic circuitry, but also advanced optical sensing applications. On-chip circuits based on plasmonic systems are a promising potential technology. Here the authors present efficient, on-chip, localized plasmonic excitation based on resonant inelastic electron tunneling with metallic quantum well junction.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据