Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory

Resistive switching memory that uses halide perovskites (HP) has been considered as nextgeneration storage devices due to low operation voltage and high on/off ratio. However, the memory still faces challenges for stable operation with fast switching speed, which hinders the practical application. Thus, it should be considered from the stage of designing the HP for memory applications. Here, we design the perovskite memory using a high-throughput screening based on first-principles calculations. Total 696 compositions in four different crystal structures are investigated and essential parameters including stability, vacancy formation, and migration are considered as the descriptor. We select dimer-Cs3Sb2I9 as an optimal HP for memory; the device that uses dimer-Cs3Sb2I9 has ultra-fast switching speed (similar to 20 ns) compared to the device that uses layer-Cs3Sb2I9 (>100 ns). The use of leadfree perovskite avoids environmental problems caused by lead in perovskite. These results demonstrate the feasibility to design the memory with ultra-fast switching speed.

Automated summary

A high-throughput screening based on first-principles calculations was used to design a perovskite memory with ultra-fast switching speed, providing a feasible solution for next-generation storage devices.