Evidence of two-dimensional flat band at the surface of antiferromagnetic kagome metal FeSn

The kagome lattice has long been regarded as a theoretical framework that connects lattice geometry to unusual singularities in electronic structure. Transition metal kagome compounds have been recently identified as a promising material platform to investigate the long-sought electronic flat band. Here we report the signature of a two-dimensional flat band at the surface of antiferromagnetic kagome metal FeSn by means of planar tunneling spectroscopy. Employing a Schottky heterointerface of FeSn and an n-type semiconductor Nb-doped SrTiO3, we observe an anomalous enhancement in tunneling conductance within a finite energy range of FeSn. Our first-principles calculations show this is consistent with a spin-polarized flat band localized at the ferromagnetic kagome layer at the Schottky interface. The spectroscopic capability to characterize the electronic structure of a kagome compound at a thin film heterointerface will provide a unique opportunity to probe flat band induced phenomena in an energy-resolved fashion with simultaneous electrical tuning of its properties. Furthermore, the exotic surface state discussed herein is expected to manifest as peculiar spin-orbit torque signals in heterostructure-based spintronic devices. Transition metal kagome compounds have been shown to host flat bands in their bulk electronic spectrum. Here, using planar tunnelling spectroscopy supported by first-principles calculations, the authors report the signature of a novel type of flat band at the surface of antiferromagnetic kagome metal FeSn.

Automated summary

Transition metal kagome compounds have been identified as a promising material platform to investigate the electronic flat band. The authors report the signature of a two-dimensional flat band at the surface of antiferromagnetic kagome metal FeSn using planar tunneling spectroscopy supported by first-principles calculations. The spectroscopic capability to characterize the electronic structure of a kagome compound at a thin film heterointerface provides a unique opportunity to probe flat band induced phenomena with simultaneous electrical tuning of its properties.