4.8 Article

Robust coherent control of solid-state spin qubits using anti-Stokes excitation

期刊

NATURE COMMUNICATIONS
卷 12, 期 1, 页码 -

出版社

NATURE RESEARCH
DOI: 10.1038/s41467-021-23471-8

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资金

  1. National Key Research and Development Program of China [2016YFA0302700, 2017YFA0304100]
  2. National Natural Science Foundation of China [U19A2075, 61725504, 61905233, 11975221, 11804330, 11821404, 11774335]
  3. Key Research Program of Frontier Sciences, Chinese Academy of Sciences (CAS) [QYZDY-SSW-SLH003]
  4. Science Foundation of the CAS [ZDRW-XH-2019-1]
  5. Anhui Initiative in Quantum Information Technologies [AHY060300, AHY020100]
  6. Fundamental Research Funds for the Central Universities [WK2030380017, WK2470000026]
  7. National Office of Research, Development and Innovation in Hungary for Quantum Technology Program [2017-1.2.1-NKP-2017-00001]
  8. National Excellence Program [KKP129866]
  9. project Nanospin (EU QuantERA) [127902]
  10. Ministry of Innovation and Technology

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The authors use anti-Stokes excitation to detect Si vacancy spins in SiC, achieving a threefold improvement in signal contrast, and show promising applications in quantum information processing and quantum sensing.
Optically addressable solid-state color center spin qubits have become important platforms for quantum information processing, quantum networks and quantum sensing. The readout of color center spin states with optically detected magnetic resonance (ODMR) technology is traditionally based on Stokes excitation, where the energy of the exciting laser is higher than that of the emission photons. Here, we investigate an unconventional approach using anti-Stokes excitation to detect the ODMR signal of silicon vacancy defect spin in silicon carbide, where the exciting laser has lower energy than the emitted photons. Laser power, microwave power and temperature dependence of the anti-Stokes excited ODMR are systematically studied, in which the behavior of ODMR contrast and linewidth is shown to be similar to that of Stokes excitation. However, the ODMR contrast is several times that of the Stokes excitation. Coherent control of silicon vacancy spin under anti-Stokes excitation is then realized at room temperature. The spin coherence properties are the same as those of Stokes excitation, but with a signal contrast that is around three times greater. To illustrate the enhanced spin readout contrast under anti-Stokes excitation, we also provide a theoretical model. The experiments demonstrate that the current anti-Stokes excitation ODMR approach has promising applications in quantum information processing and quantum sensing. Optically detected magnetic resonance of defect spins typically relies on Stokes excitation, in which the excitation energy is larger than that of the emitted photon. Here, the authors use the opposite regime of anti-Stokes excitation to detect Si vacancy spins in SiC, with a threefold improvement in signal contrast.

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