期刊
IEEE PHOTONICS JOURNAL
卷 13, 期 4, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2021.3091539
关键词
Silicon; Junctions; Couplers; Reflection; Performance evaluation; Photonics; Finite difference methods; Silicon photonics; splitter; multimode interferometer
资金
- National Key Research and Development Program [2019YFB1803902]
- Guangdong Basic and Applied Basic Research Foundation [2021A1515012215]
- Science and Technology Planning Project of Guangdong Province [2019A050510039]
- Natural Science Foundation of Guangdong Province [2018A0303130117]
A low-loss, compact, polarization-insensitive 3dB optical power splitter for submicron silicon waveguides has been developed and optimized over a broad wavelength range, with a small junction footprint of 1.8 x 1.3 μm. Fabricated using electron beam lithography, the device maintains a compact size with low insertion loss of less than 0.3 dB for both TE and TM polarizations.
We present a low-loss, compact, polarization insensitive 3-dB optical power-splitter for submicron silicon waveguides. The splitter is optimized over a broad wavelength span ranging from 1300 to 1700 nm through finite difference time domain simulations. The splitter junction footprint is only 1.8 x 1.3 mu m, which is smaller than previously reported broadband multimode junction splitters. Furthermore, the demonstrated device overcomes the fabrication limitations of previous splitters while maintaining a compact size without any sharp angles. The device was fabricated using electron beam lithography. The experimental results show a small insertion loss of less than 0.3 dB for both the TE and TM polarizations.
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