4.6 Article

Plasma spray-chemical vapor deposition of nanotextured film with α/β Bi2O3 heterostructure and photocatalytic degradation performance

期刊

VACUUM
卷 188, 期 -, 页码 -

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2021.110206

关键词

alpha/beta Bi2O3 hetero junction; Nanotextured film; Plasma spraying-chemical vapor deposition; Photocatalytic degradation

资金

  1. Key R & D Projects of Jiangsu Province [BE2020643]
  2. National Natural Science Foundation of China of China [51775545, 51741509]
  3. Fundamental Research Funds for the Central Universities [2014QNA13]
  4. Research Innovation Program for College Graduates of Jiangsu Province [201910290221X]

向作者/读者索取更多资源

The study successfully fabricated Bi2O3 film on aluminum foil using PS-CVD technology, demonstrating a tree coral-like dendritic morphology and good repetition performance. It opens up the possibility of utilizing atmospheric plasma spraying for the preparation of semiconductor nano oxide coating.
Bi2O3 film was fabricated on the aluminum foil by highly efficient and low-cost plasma spray-chemical vapor deposition (PS-CVD), using Bi powder as feedstock and plasma jet as heat source. SEM observation shows that the film presents a tree coral-like dendritic morphology which is constructed by Bi2O3 of 60-400 nm particle size. XRD and Fast Fourier transform (FFT) diagram of TEM analyses show that the film is composed of tetragonal beta-Bi2O3 and a small part of monoclinic alpha-Bi2O3. Two band gap widths of 2.54 eV and 2.70 eV were obtained by DRS UV-Vis study, and they are well consistent with beta-Bi2O3 and alpha-Bi2O3, respectively. TEM analysis reveals the heterojunction structure of beta-Bi2O3 and alpha-Bi2O3. The film presents a rapid photodegradation performance of MO with good repetition rate, and the fifth-time degradation efficiency remained 80% of the first-time value. By the comparison of degradation efficiency with using radical scavengers, it is proved that the superoxide radical center dot O(2)(-)plays a major role, while the hydroxyl radical center dot OH almost had no effect in the process of MO degradation. The above results open up the possibility of using atmospheric plasma spraying for the preparation of semiconductor nano oxide coating.

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