Characterization of Ti?Zr?V thin films deposited by DC and unipolar pulsed DC magnetron sputtering

Ternary Ti?Zr?V getter films with approximately equal atomic concentrations were deposited on oxygen free copper substrates by magnetron sputtering using DC and unipolar pulsed DC current modes. The thin film morphologies were studied using scanning electron microscopy, atomic force microscopy, while their chemical and phase compositions were investigated by energy dispersive spectroscopy and X-ray diffraction, respectively. The chemical states within the superficial regions of the films were characterized by X-ray photoelectron spectroscopy in ultra-high vacuum. The results indicate that both current modes promote formation of porous thin films, while the microstructure of the DC film is much finer than that of the unipolar pulsed DC film. Initially, the thin films were covered by oxides of Ti, Zr and V that are reduced upon annealing treatment; those within the DC film present faster reduction kinetics as compared with that of the unipolar pulsed DC film.

Automated summary

Ternary Ti-Zr-V getter films were deposited on copper substrates using DC and unipolar pulsed DC current modes. The DC film exhibited a finer microstructure and faster reduction kinetics of oxides compared to the unipolar pulsed DC film.